On the afternoon of March 25, 2024, the 14th academic report of the "Computer and Electronic Forum" series of activities co-sponsored by the Youth League Committee of the School of Computer and Electronic Information, the Graduate Student Association and the CCF Guangxi University Student Branch of the China Computer Federation was held in the lecture hall on the first floor of the college. Professor Zhiqiang Wang from Huazhong University of Science and Technology was invited to give a wonderful expert academic report on the topic of "Technical Challenges and Exploration of Silicon Carbide (SiC) Power Modules in High Temperature and High Power Density Applications".

At the beginning of the meeting, Professor Zhiqiang Wang introduced the School of Electrical and Electronic Engineering of Huazhong University of Science and Technology, the wide bandgap power electronics innovation team, the longitudinal link research of power semiconductors, and the 800m² domestic first-class power semiconductor packaging integration and power electronics technology research laboratory, and used popular examples to vividly illustrate the principle of power electronics technology, introduced the importance of semiconductor materials for the efficiency improvement of power electronic converters, and described the latest development status of semiconductor materials and the practical problems encountered.

Fig.1 Professor Zhiqiang Wang's report scene

Then, Professor Zhiqiang Wang introduced to us that the silicon carbide (SiC) power semiconductor module has comprehensive performance advantages (higher withstand voltage level, smaller switching loss, higher working junction temperature, etc.) compared with traditional Si modules, and has broad prospects in high-temperature and high-power applications such as multi-electric aircraft and electric vehicles. However, the development of these applications poses increasingly high technical challenges to SiC power modules, such as withstanding higher ambient temperatures, smaller size and weight, and higher reliability. In response to these challenges, Professor Wang introduced the exploration of relevant cutting-edge technologies from the perspective of SiC power module packaging integration, including high-temperature SiC power module packaging integration, low-inductance SiC power module packaging, SiC power module fast short-circuit protection and other technical directions.

Fig.2 Professor Zhiqiang Wang introduced the low-inductance package structure

Finally, the students raised their own questions around the content of Professor Wang's report and exchanged ideas with Professor Wang. The event was wonderful and enthusiastic, and the students gained a lot.

Fig.3 Teachers and students listening carefully to the lecture

Fig.4 Students actively ask questions (1)

Fig.5 Students actively ask questions (2)

Fig.6 Students actively ask questions (3)

Fig.7 Students actively ask questions (4)